As traditional silicon-based CMOS devices approach their scaling limits, fluorine-passivated aluminum phosphide (AlP) nanoribbons are emerging as a game-changing alternative. These 2D nanostructures offer exceptional semiconducting properties, such as a suitable bandgap, high carrier mobility, and thermal stability—perfect for transistors at the sub-10nm scale.International Research Awards on Advanced Nanomaterials and Nanotechnology
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